MOSFET MODELING AND BSIM3 USER'S GUIDE

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Ouvrage 0-7923-8575-6 : MOSFET MODELING AND BSIM3 USER'S GUIDE
Table of Contents
Contents v Preface xiii Introduction 1 Compact MOSFET Modeling for Circuit 1 Simulation
The Trends of Compact MOSFET Modeling 5 Modeling new physical effects 5 High frequency (HF) analog compact models 6 Simulation robustness and efficiency 7 Model standardization 8 References 8 Significant Physical Effects In Modern MOSFETs 13 MOSFET Classification and Operation 13 Strong inversion region (Vgs>Vth) 17 Weak and moderate inversion or the 18 subthreshold region Effects Impacting the Threshold Voltage 18 Non-uniform doping effects 19 Normal short channel effects 23 Reverse short channel effects 23 Normal narrow-width effects 25 Reverse narrow-width effects 27 Body bias effect and bulk charge effect 28 Channel Charge Theory 30 Accumulation 33 Depletion 33 Inversion 34 Carrier Mobility 37 Velocity Saturation 39 Channel Length Modulation 41 Substrate Current Due to Impact Ionization 44 Polysilicon Gate Depletion 48 Velocity Overshoot Effects 51 Self-heating Effect 53 Inversion Layer Quantization Effects 55 References 57 Threshold Voltage Model 65 Threshold Voltage Model for Long Channel 65 Devices
Threshold Voltage Model with Short Channel 67 Effects
Charge sharing model 68 Quasi 2-D models for drain induced 71 barrier lowering effect Narrow Width Effect Model 77 Threshold Voltage Model in BSIM3v3 80 Modeling of the vertical non-uniform 80 doping effects
Modeling of the RSCE due to lateral 83 non-uniform channel doping Modeling of the short channel effect due 85 to drain induced barrier lowering Modeling of the narrow width effects 88 Complete Vth model in BSIM3v3 90 Helpful Hints 92 References 101 I-V Model 105 Essential Equations Describing the I-V 105 Characteristics
Channel Charge Density Model 106 Channel charge model in the strong 106 inversion region
Channel charge model in the subthreshold 107 region
Continuous channel charge model of BSIMv3 109 Continuous channel charge model with the 112 effect of Vds
Mobility Model 114 Piece-wise mobility models 114 Mobility models in BSIM3v3 116 I-V Model in the Strong Inversion Region 117 I-V model in the linear (triode) region 117 Drain voltage at current saturation, Vdsat 118 Current and output resistance in the 120 saturation region
Subthreshold I-V Model 124 Single Equation I-V model of BSIMv3 125 Polysilicon Gate Depletion Effect 129 Helpful Hints 130 References 140 Capacitance Model 143 Capacitance Components in a MOSFET 144 Intrinsic Capacitance Model 145 Meyer model 145 Shortcomings of the Meyer model 151 Charge-based capacitance model 154 Extrinsic Capacitance Model 161 Capacitance Model of BSIM3v3 163 Long channel capacitance model (capMod=0) 164 Short channel capacitance (capMod=1) 170 Single-equation short channel capacitance 178 model
Short channel capacitance model with 186 quantization effect Channel Length/Width in Capacitance Model 197 Helpful Hints 198 References 207 Substrate Current Model 211 Substrate Current Generation 211 Substrate Current Model in BSIM3v3 212 Helpful Hints 215 References 217 Noise Model 219 The Physical Mechanisms of Flicker (1/f) 219 Noise
The Physical Mechanism of Thermal Noise 220 Flicker Noise Models in BSIM3v3 221 SPICE2 flicker noise model (noiMod=1) 221 Unified flicker noise model (noiMod=2) 222 Thermal Noise Models in BSIM3v3 229 Modified SPICE2 thermal noise model 230
BSIM3 thermal noise model (noiMod=2) 230 Helpful Hints 233 References 240 Source/Drain Parasitics Model 243 Parasitic Components in a MOSFET 243 Models of Parasitic Components in BSIM3v3 244 Source and drain series resistances 244 DC model of the source/drain diodes 248 Capacitance model of the source/bulk and 250 drain/bulk diodes
Helpful Hints 254 References 261 Temperature Dependence Model 263 Temperature Effects in a MOSFET 263 Temperature Dependence Models in BSIM3v3 265 Comparison of the Temperature-Effect Models 270 with Measured Data Helpful Hints 276 References 279 Non-quasi Static (NQS) Model 281 The Necessity of Modeling NQS Effects 281 The NQS Model in BSIM3v3 284 Physics basis and model derivation 284 The BSIM3 NQS Model 289 Test Results of the NQS Model 292 Helpful Hints 297 References 301 BSIM3v3 Model Implementation 303 General Structure of BSIM3v3 Model 303 Implementation
Robustness Consideration in the 306 Implementation of BSIM3v3 Testing of Model Implementation 315 Model Selectors of BSIM3v3 317 Helpful Hints 319 References 324 Model Testing 327 Requirements for a MOSFET Model in Circuit 327 Simulation
Benchmark Tests 329 Benchmark Test Results 333 Helpful Hints 350 References 351 Model Parameter Extraction 353 Overview of Model Parameter Extraction 353 Parameter Extraction for BSIM3v3 355 Optimization and extraction strategy 355 Extraction routines 355 Binning Methodology 367 Recommended Value Range of the Model 368 Parameters
Automated Parameter Extraction Tool 372 References 373 RF and Other Compact Model Applications 375 RF Modeling 375 Modeling of the gate resistance 376 Modeling the substrate network 383 A RF MOSFET model based on BSIM3v3 for 385 GHz communication IC's Statistical Modeling 393 Technology Extrapolation and Prediction 399 Using BSIM3 Model
References 406 Appendix A BSIM3v3 Parameter Table 409 A.1 Model control parameters 409 A.2 Process parameters 410 A.3 Parameters for Vth model 410 A.4 Parameters for I-V model 411 A.5 Parameters for capacitance model 414 A.6 Parameters for effective channel 415 length/width in I-V model A.7 Parameters for effective channel 416 length/width in C-V model A.8 Parameters for substrate current model 417 A.9 Parameters for noise models 417 A.10 Parameters for models of parasitic 418 components
A.11 Parameters for models of temperature 419 effects
A.12 Parameters for NQS model 420 Appendix B BSIM3v3 Model Equations 421 B.1 Vth equations 421 B.2 Effective Vgs-Vth 422 B.3 Mobility 423 B.4 Drain saturation voltage 423 B.5 Effective Vds 424 B.6 Drain current expression 424 B.7 Substrate current 425 B.8 Polysilicon depletion effect 426 B.9 Effective channel length and width 426 B.10 Drain/Source resistance 426 B.11 Capacitance model equations 426 B.12 Noise model equations 440 B.13 DC model of the source/drain diodes 443 B.14 Capacitance model of the source/bulk 444 and drain/bulk diodes B.15 Temperature effects 445 B.16 NQS model equations 447 B.17 A note on the poly-gate depletion 448 effect
Appendix C Enhancements and Changes in 449 BSIM3v3.1 versus BSIM3v3.0 C.1 Enhancements 449 C.2 Detailed changes 449 Appendix D Enhancements and Changes in 455 BSIM3v3.2 versus BSIM3v3.1 D.1 Enhancements 455 D.2 Detailed changes 456 Index 459

Auteur : CHENG
Editeur : KLUWER
Nombre de pages : 480
Date de publication : 10 1999

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